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Photoluminescence study of surface segregation of In in InGaAs-based structures grown by MBE and atomic layer MBE

✍ Scribed by A. Bosacchi; S. Franchi; P. Pascarella; P. Allegri; V. Avanzini

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 466 KB
Volume: 28
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90108-2

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