Photoluminescence study of manganese in AlSb
✍ Scribed by G. Hofmann; C. T. Lin; E. Schönherr; J. Weber
- Book ID
- 104726124
- Publisher
- Springer
- Year
- 1993
- Tongue
- English
- Weight
- 230 KB
- Volume
- 57
- Category
- Article
- ISSN
- 1432-0630
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📜 SIMILAR VOLUMES
Temperature-dependent photoluminescence properties of n-type GaSb/AlSb superlattices are reported. The measurements at temperatures ranging from room temperature to 4 K and with various excitation powers show that for our samples, radiative recombination dominates the recombination process at low te
A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum