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Photoluminescence characterization of Te-doped GaSb/AlSb superlattices

✍ Scribed by G. Ru; A. Li; Y. Zheng; W. Shen

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
51 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis

Temperature-dependent photoluminescence properties of n-type GaSb/AlSb superlattices are reported. The measurements at temperatures ranging from room temperature to 4 K and with various excitation powers show that for our samples, radiative recombination dominates the recombination process at low temperatures, and very strong exciton-phonon coupling is found from the linewidth analysis. The best fit of the integrated photoluminescence intensity as a function of temperature shows that the quench of the photoluminescence at high temperature is due to the thermal activation of nonequilibrium electrons from the 1 to L 1 subband.

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