Photoluminescence studies on AlxGa1−xSb alloys
✍ Scribed by J. Allegre; M. Averous; A. Joullie
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 422 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0022-2313
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We report a low temperature photoluminescence study on two identical Al 0.13 Ga 0.87 N/GaN single quantum wells (QWs), which are pseudomorphically grown on either a GaN or an AlGaN buffer layer. The red shift of the QW emission due to the quantum confined Stark effect, is found to be strongest in th
Ballistic electron emission microscopy (BEEM) was used to study laterally patterned GaAs/Al x Ga 1-x As heterostructures. The measurements were carried out at room temperature in air as well as in liquid helium. Wet chemically etched quantum wires were identified both in topographic and BEEM current