Photoluminescence properties of modulation-doped GaAsAlGaAs multiple quantum wells under high pressure
β Scribed by B.A. Weinstein; S.K. Hark; C. Mailhiot; C.H. Perry
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 190 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0749-6036
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π SIMILAR VOLUMES
The influence of Si doping on the photoluminescence (PL) properties of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P multiple-quantum-wells (MQWs) was studied. For the samples without p-type layers, the PL peak wavelength from (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P MQWs did not vary when Si w
In pulsed high magnetic fields up to 40 T perpendicular to layers, we investigated photoluminescence (PL) from quasizero-dimensional carriers in modulation-doped GaAs/A1GaAs quantum wells for various electron densities at 77 K. We observed an oscillation of PL intensity due to magnetophonon resonanc