Photoluminescence properties of erbium doped InGaN epilayers
โ Scribed by Sedhain, A.; Ugolini, C.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.
- Book ID
- 121531524
- Publisher
- American Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 530 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0003-6951
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๐ SIMILAR VOLUMES
A comparative combined study of photoluminescence (PL), PL kinetics, stimulated emission (SE) and photoreflectance (PR) properties in In x Ga 12x N epilayers is carried out in the composition range 0 # x # 0:19: In-incorporation up to 4% leads to the sufficient longer radiative recombination decay t
An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrom