We have studied the emission mechanism of InGaN/GaN nanocolumns. We extracted only the effect of localized states and investigated the difference between InGaN/GaN single-quantum-disc (SQD) and InGaN nanocolumns by means of photoluminescence and photoluminescence excitation measurements. The differe
β¦ LIBER β¦
Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers
β Scribed by N. Woodward; V. Dierolf; J.Y. Lin; H.X. Jiang; J.M. Zavada
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 710 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0925-3467
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