Optical properties of InGaN/GaN SQD nanocolumn and InGaN nanocolumn
β Scribed by Naoki Suzuki; Kazuaki Kouyama; Yuta Insose; Hideyuki Kunugita; Kazuhiro Ema; Hiroto Sekiguchi; Akihiko Kikuchi; Katumi Kisino
- Publisher
- Elsevier
- Year
- 2009
- Tongue
- English
- Weight
- 343 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1875-3892
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β¦ Synopsis
We have studied the emission mechanism of InGaN/GaN nanocolumns. We extracted only the effect of localized states and investigated the difference between InGaN/GaN single-quantum-disc (SQD) and InGaN nanocolumns by means of photoluminescence and photoluminescence excitation measurements. The difference between the localized states was interpreted by the band tail model. We conclude that the InGaN nanocolumn has widely distributed localized states, while the InGaN/GaN SQD has a single localized state..
π SIMILAR VOLUMES
c-Axis-aligned InN nanocolumn arrays were vertically grown on 3 mm GaN epilayers with InGaN buffer layers by radio-frequency molecular beam epitaxy without any catalysts. X-ray diffraction, transmission electron microscopy, and field-emission scanning electron microscope were used to study the struc