Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers

✍ Scribed by Mee-Yi Ryu; E Kuokstis; C.Q Chen; J.W Yang; G Simin; M Asif Khan; G.G Sim; P.W Yu

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 166 KB
• Volume: 126
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(03)00147-9

✦ Synopsis

A comparative combined study of photoluminescence (PL), PL kinetics, stimulated emission (SE) and photoreflectance (PR) properties in In x Ga 12x N epilayers is carried out in the composition range 0 # x # 0:19: In-incorporation up to 4% leads to the sufficient longer radiative recombination decay time due to the decrease in non-radiative recombination channels, which are peculiar to GaN, and band-to-band optical transitions predominate the spontaneous PL spectrum. Further In-incorporation ðx . 4%Þ leads to the localization of carriers and/or excitons at band-tails in the In-rich areas. Correlation between the position of dominant low-energy PR oscillation due to the main band gap and SE peak position shows that band-to-band transitions are responsible for lasing and dominate the PL spectrum in all highly pumped In x Ga 12x N samples.