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Photoluminescence properties of disordered GaAs heavily doped with Si

✍ Scribed by H. Takano; T. Kamijoh; M. Sakuta

Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 169 KB
Volume: 31-32
Category: Article
ISSN: 0022-2313
DOI: 10.1016/0022-2313(84)90321-1

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