Photoluminescence of undoped and Er-doped 1.1-μm InGaAsP layers grown by liquid-phase epitaxy
✍ Scribed by Cheng-Ming Chiu; Meng-Chyi Wu; Chung-Chi Chang
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 438 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Erbium (Er 3+ ) doped LiNbO 3 single crystal thin films have been grown LiNbO 3 (001) substrate by the liquid phase epitaxy method. The crystallinity was determined by high-resolution X-ray diffraction. The lattice mismatch between Er 3+ doped LiNbO 3 films and LiNbO 3 (001) substrate was investigat
Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was