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Properties of undoped and manganese-doped InGaAsP grown by liquid phase electroepitaxy

✍ Scribed by Shanthi N. Iyer; Ali Abul-Fadl; Ward J. Collis; Mohammad N. Khorrami

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
426 KB
Volume
163
Category
Article
ISSN
0040-6090

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Numerical analysis of growth kinetics of
Numerical analysis of growth kinetics of bulk III-V crystals grown by liquid phase electroepitaxy
✍ P. Strak; Z. R. Zytkiewicz; K. Sakowski; S. Krukowski πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 296 KB πŸ‘ 2 views

## Abstract Results of time‐dependent simulations of growth of bulk binary III–V crystals by current controlled liquid phase electroepitaxy (LPEE) are presented using GaAs as example. Without any electrical current the LPEE system is isothermal, kept at 1073 K, thus no growth occurs. The electric c