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Photoluminescence of high‐quality GaSb grown from Ga‐ and Sb‐rich solutions by liquid‐phase epitaxy

✍ Scribed by Wu, Meng‐Chyi; Chen, Chi‐Ching


Book ID
118257460
Publisher
American Institute of Physics
Year
1992
Tongue
English
Weight
983 KB
Volume
72
Category
Article
ISSN
0021-8979

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Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was