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Photoluminescence in ZnSe grown by liquid-phase epitaxy from Zn-Ga solution

✍ Scribed by Fujita, Shigeo; Mimoto, Haruhiko; Noguchi, Toru


Book ID
120656593
Publisher
American Institute of Physics
Year
1979
Tongue
English
Weight
848 KB
Volume
50
Category
Article
ISSN
0021-8979

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Photoluminescence measurements of GaAs g
✍ M. Ciorga; L. Bryja; J. Misiewicz; R. Paszkiewicz; M. Panek; B. Paszkiewicz; M. πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 102 KB πŸ‘ 1 views

Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was