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Photoluminescence of erbium in SiOxNy alloys annealed at high temperature

โœ Scribed by Steveler, E.; Rinnert, H.; Vergnat, M.

Book ID
122223240
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
587 KB
Volume
593
Category
Article
ISSN
0925-8388

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The damage produced by implantation of Er ions of 400 keV at a fluence of 5 ร‚ 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after ann