Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm

✍ Scribed by V. Yu. Davydov; V. V. Lundin; A. N. Smirnov; N. A. Sobolev; A. S. Usikov; A. M. Emel’yanov; M. I. Makoviichuk; E. O. Parshin

• Book ID: 110120014
• Publisher: Springer
• Year: 1999
• Tongue: English
• Weight: 89 KB
• Volume: 33
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1187636