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Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films

✍ Scribed by V. Kh. Kudoyarova; A. N. Kuznetsov; E. I. Terukov; O. B. Gusev; Yu. A. Kudryavtsev; B. Ya. Ber; G. M. Gusinskii; W. Fuhs; G. Weiser; H. Kuehne

Book ID: 110119975
Publisher: Springer
Year: 1998
Tongue: English
Weight: 101 KB
Volume: 32
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1187597

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