Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence
β¦ LIBER β¦
Photoluminescence of CdSe quantum dots and rods from buffer-layer-assisted growth
β Scribed by Antonov, V. N.; Swaminathan, P.; Soares, J. A. N. T.; Palmer, J. S.; Weaver, J. H.
- Book ID
- 111961456
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 448 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0003-6951
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## Abstract We report on the self organized growth of GaN quantum dots deposited on Al~__x__~ Ga~1β__x__~ N layer by plasmaβassisted molecular beam epitaxy. It is found that the relaxation of Al~__x__~ Ga~1β__x__~ N layer on AlN depends on Al composition and thickness. The measurement of the variat