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Photoluminescence in electron-irradiated unannealed and annealed GaAs:Zn – irradiation-induced 1.26 and 1.39 ev emission bands

✍ Scribed by Glinchuk, K. D. ;Guroshev, V. I. ;Prokhorovich, A. V. ;Zayats, N. S.

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
263 KB
Volume
92
Category
Article
ISSN
0031-8965

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Effect of Fast Electron Irradiation and
Effect of Fast Electron Irradiation and Annealing on the Luminescence in GaAs(Zn) crystals. Irradiation-induced 1.26 and 1.39 eV Emission Bands
✍ Dr. K. D. Glinchuk; V. I. Guroshev; A. V. Prokhorovich; N. S. Zayats 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 427 KB

Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1) The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradi