Photoluminescence (PL) properties of Al-doped b-FeSi 2 grown by ion beam synthesis have been investigated. The Al-doped samples showed increase of the PL intensity. In the dependence of Al composition, the sample of low Al concentration showed the larger PL intensity and activation energy for non-ra
✦ LIBER ✦
Photoluminescence enhancement in impurity doped β-FeSi2
✍ Scribed by Yoshikazu Terai; Yoshihito Maeda
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 286 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0925-3467
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We have grown n-and p-type b-FeSi 2 single crystals by the temperature gradient solution growth method using Sn-Ga solvent. The conduction type and the carrier density of the crystals were controlled by the Ga composition in the Sn-Ga solvent. The conduction type was changed from n-to p-type between