Photoluminescence enhancement of -FeSi2 by optimizing Al-doping concentration

✍ Scribed by Yoshikazu Terai; Yoshihito Maeda; Yasufumi Fujiwara

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 127 KB
• Volume: 376-377
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.12.200

✦ Synopsis

Photoluminescence (PL) properties of Al-doped b-FeSi 2 grown by ion beam synthesis have been investigated. The Al-doped samples showed increase of the PL intensity. In the dependence of Al composition, the sample of low Al concentration showed the larger PL intensity and activation energy for non-radiative recombination path. The Al dependence indicates that there is competition of enhancement and retardation effects of the PL by the Al-implantation.