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Control of Ga doping level in β-FeSi2 using Sn–Ga solvent

✍ Scribed by Haruhiko Udono; Kazutaka Matsumura; Isao J Ohsugi; Isao Kikuma

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
211 KB
Volume
6
Category
Article
ISSN
1369-8001

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✦ Synopsis

We have grown n-and p-type b-FeSi 2 single crystals by the temperature gradient solution growth method using Sn-Ga solvent. The conduction type and the carrier density of the crystals were controlled by the Ga composition in the Sn-Ga solvent. The conduction type was changed from n-to p-type between the Ga composition of 10.2 and 18.5 at% in the solvent. Depending on the Ga composition in the solvent, the carrier density of n-and p-type crystals was changed from 1:5 Â 10 17 to 3 Â 10 17 cm À3 and 4 Â 10 17 to 2 Â 10 19 cm À3 ; respectively. The activation energies of n-type crystals were 0.09-0:11 eV while that of p-type crystals were 0.

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