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Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

✍ Scribed by Mickevičius, J. ;Kuokštis, E. ;Liuolia, V. ;Tamulaitis, G. ;Shur, M. S. ;Yang, J. ;Gaska, R.

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 188 KB
Volume: 207
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200925227

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✦ Synopsis

Abstract

We report on photoluminescence (PL) studies of AlGaN/AlGaN multiple quantum well (MQW) structures with well widths spanning from 1.65 to 5.0 nm under various excitations and temperatures. The samples were fabricated by migration‐enhanced metal‐organic chemical vapor deposition technique (MEMOCVD®). Screening of the built‐in electric field by photogenerated carriers reduced quantum‐confined Stark effect (QCSE). This is confirmed by solving the Poisson and Schrodinger equations for AlGaN‐based quantum wells (QWs) under study. Analysis of the PL internal quantum efficiency under different excitations in MQWs with different widths shows strong influence of the carrier localization on the radiative properties of MQWs.

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