We observed two peaks (fast and slow components) in time-resolved photocurrents for type-I GaAs/AlAs superlattices (SLs). The calculations of the envelop function for the SLs showed that the X state in the AlAs barriers resonates with the state in the adjacent GaAs wells at the bias voltage where th
Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices
β Scribed by R. Kido; A. Satake; K. Fujiwara
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 319 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
We report on the effects of field-induced -X resonances on carrier transport and optical properties of GaAs/AlAs type-I short-period superlattices (SLs). We have observed an anomalously delayed photocurrent and 2-hh1 photoluminescence originating from X1-2 mixing. These observations clearly suggest
The temperature dependence of the recombination dynamics of excitons is investigated by time-resolved photoluminescence spectroscopy in (GaAs) n /(AlAs) n superlattices, where n denotes the layer thickness in monolayers, for different types of band structures. In directgap superlattices with a layer