Carrier transport and photoluminescence affected by Γ–X resonance in GaAs–AlAs type-I superlattices

✍ Scribed by H Mimura; M Hosoda; N Ohtani; K Fujiwara; K Yokoo

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 230 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00065-4

✦ Synopsis

We observed two peaks (fast and slow components) in time-resolved photocurrents for type-I GaAs/AlAs superlattices (SLs). The calculations of the envelop function for the SLs showed that the X state in the AlAs barriers resonates with the state in the adjacent GaAs wells at the bias voltage where the slow components become larger. The photoluminescence measurements revealed that some electrons transfer from the to X states and flow through the X --X channel at the near X resonance voltage. The slow component in the transient photocurrents originates from the X --X -electron transport.