Various photoluminescence properties due to Γ–X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses

✍ Scribed by Naoki Ohtani; Hiroyuki Endo; Shingo Hiratsuka; Hiroshi Kitamura; Toshinari Takamatsu; Makoto Hosoda

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 227 KB
• Volume: 40
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2007.09.070