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Photoluminescence detection of impurities introduced in silicon by dry etching processes

✍ Scribed by J. Weber; R. J. Davis; H. -U. Habermeier; W. D. Sawyer; M. Singh


Publisher
Springer
Year
1986
Tongue
English
Weight
309 KB
Volume
41
Category
Article
ISSN
1432-0630

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The dependence of the etch rate uniformity across the wafer on the reactor design and various process parameters was investigated for the reactive ion etching (RIE) of silicon using pure sulphur hexafluoride (SF ). The experiments were 6 carried out in two different single wafer reactors without ion