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Photoluminescence characterization of dually Cd+ and N+ ion-implanted GaAs

✍ Scribed by M. Kotani; T. Iida; Y. Makita; Y. Kawasumi; X.H. Fang; S. Kimura; D.S. Jiang; H. Shibata; T. Shima; T. Tsukamoto; N. Koura

Book ID
114168367
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
343 KB
Volume
121
Category
Article
ISSN
0168-583X

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## Abstract The surface of silicon‐doped GaAs (100) grown by the vertical Bridgman method has been implanted with H^+^ ions at 30 keV for various doses from 10^14^ to 10^17^ cm^–2^ and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantat