Photoluminescence and field-emission properties of Cu-doped SnO2nanobelts
โ Scribed by L. J. Li; K. Yu; H. B. Mao; Z. Q. Zhu
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 573 KB
- Volume
- 99
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract SnO~2~ nanowalls were synthesized on silicon substrate by the thermal chemical vapor transport method at a low temperature of around 650 ยฐC under atmospheric pressure. The microstructure and morphology of the SnO~2~ nanowalls were evaluated by using scanning electron microscopies and Xโ
## Abstract Cuโdoped ZnO films were deposited by direct current magnetron sputtering at room temperature in an atmosphere of argon and oxygen. The properties of Cuโdoped ZnO films were characterized and their field emission was studied. The field emission is related to the defect energy levels of Z
P-type transparent conducting antimony-doped tin oxide (ATO) films were successfully fabricated on quartz glass substrates by radiofrequency magnetron sputtering using a 20 mol.% Sb-doped SnO 2 ceramic target. The deposited films were annealed at different temperatures for different durations. Hall