Electrical, structural, photoluminescence and optical properties of p-type conducting, antimony-doped SnO2 thin films

✍ Scribed by J. Ni; X. Zhao; X. Zheng; J. Zhao; B. Liu

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 683 KB
• Volume: 57
• Category: Article
• ISSN: 1359-6454
• DOI: 10.1016/j.actamat.2008.09.013

✦ Synopsis

P-type transparent conducting antimony-doped tin oxide (ATO) films were successfully fabricated on quartz glass substrates by radiofrequency magnetron sputtering using a 20 mol.% Sb-doped SnO 2 ceramic target. The deposited films were annealed at different temperatures for different durations. Hall effect results indicated that 973 K was the optimum annealing temperature to get p-type ATO films with the highest hole concentration (5.83 Â 10 19 cm -3 ). X-ray diffraction studies indicated that the preferred (1 0 1) orientation favored the formation of p-type conducting films. Photoluminescence spectra showed an intense UV luminescence peak near 362 nm resulting from the band-edge exciton transition observed for p-type ATO films. UV-visible transmission spectra showed that p-type ATO films had high transparence. In addition, p-type conductivity was also confirmed by the non-linear characteristics of a p-type ATO/n-type ATO structure; the diode structure has an optical transmission of $60-85% in the visible light range.