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Synthesis and field emission properties of SnO2 nanowalls

✍ Scribed by L. J. Li; K. Yu; Y. Wang


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
193 KB
Volume
44
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

SnO~2~ nanowalls were synthesized on silicon substrate by the thermal chemical vapor transport method at a low temperature of around 650 Β°C under atmospheric pressure. The microstructure and morphology of the SnO~2~ nanowalls were evaluated by using scanning electron microscopies and X‐ray diffraction. Room temperature photoluminescence spectra of the nanowalls showed a broad emission band centering at about 530 nm. Field emission measurements demonstrated that the nanowalls possessed good performance with a turn‐on field of ∼3.5 V/ΞΌm and a threshold field of ∼6.1 V/ΞΌm. (Β© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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