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Photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon

✍ Scribed by Hang-Ting Lue; Bang-Yuh Huang; Juh-Tzeng Lue

Book ID
114192382
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
222 KB
Volume
65
Category
Article
ISSN
0254-0584

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We describe the defect properties in nitrogen plasma treated porous silicon (PS) studied using electron paramagnetic resonance (EPR). We consider the dependence of the paramagnetic properties of the defects on the structure of PS. The nitrogen plasma treatment changed the structure of PS. After the