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Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon

✍ Scribed by B Rakvin; B Pivac; R Tonini; F Corni; G Ottaviani

Book ID
114164037
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
177 KB
Volume
170
Category
Article
ISSN
0168-583X

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A review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the: hydrogenic analogue of the anomalous muonium (Mu\