Electron paramagnetic resonance of hydrogen in silicon

✍ Scribed by Yu.V. Gorelkinskii; N.N. Nevinnyi

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 893 KB
• Volume: 170
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(91)90119-y

✦ Synopsis

A review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the: hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 +-0.(14 eV with a second-order pre-exponential factor, K~ = (1.25 -+ 2.5) × 10 7 cm,/s.

A detailed investigation by EPR of the defect (Si-AAI), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has Cz, symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.