Photoemission (XPS and XPD) study of epitaxial LaAlO3 film grown on SrTiO3(0 0 1)
β Scribed by M. El Kazzi; C. Merckling; G. Delhaye; L. Arzel; G. Grenet; E. Bergignat; G. Hollinger
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 487 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
β¦ Synopsis
This study investigates the tensile-strained growth of LaAlO 3 on SrTiO 3 (0 0 1) substrate by molecular beam epitaxy (MBE). Growth was controlled in situ by reflection high energy electron diffraction (RHEED). The characterization was carried out ex situ by photoemission and atomic force microscopy (AFM). Photoelectron spectroscopy (XPS) reveals the development of a TiO x -rich interface. Photoelectron diffraction (XPD) confirms that a 1.2-nm-thick pseudomorphic LaAlO 3 film has been grown on SrTiO 3 (0 0 1) substrate with a perpendicular lattice parameter of 0.37270.02 nm.
π SIMILAR VOLUMES
The structural stabilization of SmNiO 3 (SNO) films epitaxially grown by an injection MO-CVD process on (0 0 1) SrTiO 3 (STO) substrates is investigated. Using high-resolution X-ray diffraction (XRD), we show that SNO can be stabilized on STO with a minor amount of secondary phases and with a layer
For applications of YBa 2 Cu 3 O 7Γx (YBCO) thin films, the critical current density (J c ) should be improved by introducing pinning centers into YBCO thin films. We prepared YBCO films on SrTiO 3 (1 0 0) and MgO(1 0 0) substrates by means of pulsed laser deposition in order to study the flux pinni
We have studied the Si initial growth mechanisms on LaAlO 3 (0 0 1), a crystalline oxide with a high dielectric constant (high-k material). The clean LaAlO 3 (0 0 1) substrate exhibits a c(2 Γ 2) reconstruction that can be attributed to surface O vacancies. Si deposit by molecular beam epitaxy was