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Photoemission study of the growth of the NdF3/Si(111) interface

โœ Scribed by K. M. Colbow; S. Cramm; C. Malten; W. Eberhardt


Publisher
Springer
Year
1994
Tongue
English
Weight
611 KB
Volume
59
Category
Article
ISSN
1432-0630

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Core-level photoemission study of the Bi
โœ C. McGinley; A.A. Cafolla; E. McLoughlin; B. Murphy; D. Teehan; P. Moriarty; D.A ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 187 KB

Core-level photoemission spectra of the As 3d, Ga 3d and Bi 5d core levels were recorded for the Bi GaAs ลฝ . ลฝ . 111 A-2 = 2 surface. From the early stages of Bi growth, there are two distinct chemical environments for Bi. Surface Bi is bonded to both As and Ga atoms. The deposition of approximately