Core-level photoemission study of the BiGaAs(111)A interface

✍ Scribed by C. McGinley; A.A. Cafolla; E. McLoughlin; B. Murphy; D. Teehan; P. Moriarty; D.A. Woolf

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 187 KB
• Volume: 158
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00012-x

✦ Synopsis

Core-level photoemission spectra of the As 3d, Ga 3d and Bi 5d core levels were recorded for the Bi GaAs Ž . Ž . 111 A-2 = 2 surface. From the early stages of Bi growth, there are two distinct chemical environments for Bi. Surface Bi is bonded to both As and Ga atoms. The deposition of approximately 1 ML of Bi removes the dangling bonds from the Ž . surface As and Ga atoms, which are associated with the 2 = 2 vacancy-buckling structure. Annealing to 3508C reverses this process and surface dangling bonds for Ga reappear. When the Bi had fully desorbed at 4258C, photoemission and Ž . LEED results showed that the surface recovers the 2 = 2 vacancy structure but with a larger degree of surface disorder than that found before the deposition of Bi.