𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE

✍ Scribed by G.A. Onushkin; A.E. Nikolaev; A.V. Fomin; O.Yu. Ledyaev; A.E. Cherenkov; E.V. Kalinina; I.P. Nikitina; O.V. Kovalenkov; V.A. Dmitriev

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
129 KB
Volume
0
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Properties of Si-Doped GaN Layers Grown
Properties of Si-Doped GaN Layers Grown by HVPE
✍ Fomin, A.V. ;Nikolaev, A.E. ;Nikitina, I.P. ;Zubrilov, A.S. ;Mynbaeva, M.G. ;Kuz πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 103 KB πŸ‘ 2 views
Characterization of AlGaN layer with hig
Characterization of AlGaN layer with high Al content grown by mixed-source HVPE
✍ Ahn, H. S. ;Kim, K. H. ;Yang, M. ;Yi, J. Y. ;Lee, H. J. ;Chang, J. H. ;Kim, H. S πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 218 KB

## Abstract Using mixed‐source hydride vapor‐phase epitaxy (HVPE), an AlGaN layer with high Al content on GaN/Al~2~O~3~ substrate is obtained. The AlGaN layer grown by mixed‐source HVPE is characterized by X‐ray diffraction (XRD) measurements and cathodoluminescence (CL) spectra. In the mixed‐sourc

X-ray characterization of thick GaN laye
X-ray characterization of thick GaN layers grown by HVPE
✍ R. Korbutowicz; J. KozΕ‚owski; E. Dumiszewska; J. SerafiΕ„czuk πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 317 KB

## Abstract The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE) thin GaN epitaxial layers deposited on (00.1) sapphire substrates are described and compared with the structural properties of the thick gallium nitride layers deposited by Hydride Vapour Phase Epit