𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

✍ Scribed by Xu Pan; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Cuibai Yang; Wei Li; Weiying Wang; Peng Jin; Zhanguo Wang

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
549 KB
Volume
257
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of AlGaN layer with hig
Characterization of AlGaN layer with high Al content grown by mixed-source HVPE
✍ Ahn, H. S. ;Kim, K. H. ;Yang, M. ;Yi, J. Y. ;Lee, H. J. ;Chang, J. H. ;Kim, H. S 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 218 KB

## Abstract Using mixed‐source hydride vapor‐phase epitaxy (HVPE), an AlGaN layer with high Al content on GaN/Al~2~O~3~ substrate is obtained. The AlGaN layer grown by mixed‐source HVPE is characterized by X‐ray diffraction (XRD) measurements and cathodoluminescence (CL) spectra. In the mixed‐sourc

Anomalously low Ga incorporation in high
Anomalously low Ga incorporation in high Al-content AlGaN grown on $(11{\bar {2}}0)$ non-polar plane by molecular beam epitaxy
✍ Ueta, Shunsaku ;Horita, Masahiro ;Kimoto, Tsunenobu ;Suda, Jun 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 323 KB

## Abstract Crystalline orientation dependence of Ga incorporation in growth of high Al‐content AlGaN was investigated. Growth was carried out by molecular‐beam epitaxy (MBE) using elemental Al, Ga, and rf‐plasma‐excited nitrogen under various V/III ratios. 6H‐SiC (0001), 4H‐SiC ($1{\bar {1}}00$) a