Anomalously low Ga incorporation in high Al-content AlGaN grown on $(11{\bar {2}}0)$ non-polar plane by molecular beam epitaxy
✍ Scribed by Ueta, Shunsaku ;Horita, Masahiro ;Kimoto, Tsunenobu ;Suda, Jun
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 323 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Crystalline orientation dependence of Ga incorporation in growth of high Al‐content AlGaN was investigated. Growth was carried out by molecular‐beam epitaxy (MBE) using elemental Al, Ga, and rf‐plasma‐excited nitrogen under various V/III ratios. 6H‐SiC (0001), 4H‐SiC ($1{\bar {1}}00$) and 4H‐SiC ($11{\bar {2}}0$) were used as substrates. Ga incorporation increased with increase of V/III ratio in the layers grown on (0001) and ($1{\bar {1}}00$) planes. On the other hand, Ga was not incorporated in the layer grown on ($11{\bar {2}}0$) plane even when the layer was grown under a nitrogen rich condition, indicating much lower Ga incorporation on ($11{\bar {2}}0$) plane than those of other planes. AlGaN with good quality was successfully grown on ($1{\bar {1}}00$) plane. Utilization of ($1{\bar {1}}00$) plane is suitable in MBE growth of AlGaN‐based deep‐ultraviolet light emitting devices.