Photodetection and light emission of GaAs negative-resistance switching device

✍ Scribed by Shinji Nakagomi; Satoshi Shimizu; Tatsuo Yamamoto

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 330 KB
• Volume: 52
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(96)80134-8

✦ Synopsis

We have fabricated a new type of switching device. This device is optically triggered and emits light in the on-state. It consists of a metalinsulator-(n)GaAs-(p +)GaAs structure. The relationship between applied voltage (V), current (I) and intensity of light emission (L) of the device has been measured. We find that the slopes of log(L) versus log(l) have higher values than unity only in the negative-resistance region. I-V and capacitance-voltage characteristics have been studied under light illumination. Moreover, the optically triggered switching behavior and light emission have been measured in pulse mode. We expect this switching device to have many applications.