Photodetection and light emission of GaA
β
Shinji Nakagomi; Satoshi Shimizu; Tatsuo Yamamoto
π
Article
π
1996
π
Elsevier Science
π
English
β 330 KB
We have fabricated a new type of switching device. This device is optically triggered and emits light in the on-state. It consists of a metalinsulator-(n)GaAs-(p +)GaAs structure. The relationship between applied voltage (V), current (I) and intensity of light emission (L) of the device has been mea