Light emission characteristics and negative resistance phenomenon of Si-based metal/insulator/semiconductor tunnel junction
✍ Scribed by MaoXiang Wang; JianHua Yu; ChengXiu Sun
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 83 KB
- Volume
- 161
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
✦ Synopsis
We have fabricated the AurSiO rSi MetalrInsulatorrSemiconductor tunnel junctions MISJ using heavily Sb-doped Si 2
Ž
. wafers and an SiO insulating layer. Stable, uniform, broadband 500-900 nm light emission was observed from the MISJ 2 with an emission efficiency of 10 y5 , which is one to two orders of magnitude higher than that of an AurAl O rAl 2 3
Ž
. Ž . junction. The light emission spectrum has main peaks at 620 2.00 eV and 735 nm 1.69 eV . A negative resistance Ž . Ž . phenomenon NRP in the I-V curve, possibly due to surface plasmon polariton SPP scattering on the tunneling electrons, is closely associated with light emission. The MISJ is compatible with Si microelectronic technology and can be used for new kinds of integrated optoelectronic and photonic devices.