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Photocurrent multiplication in amorphous Si/crystalline Si heterojunction

✍ Scribed by K. Ishida; S. Nakamura; T. Toyama; H. Okamoto; Y. Hamakawa

Book ID
108418423
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
394 KB
Volume
113-114
Category
Article
ISSN
0169-4332

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Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye