Photoconductivity in ion-implanted thin films of Si:In and Si:Tl
โ Scribed by W. Peschel; R. Kuhnert; M. Schulz
- Publisher
- Springer
- Year
- 1983
- Tongue
- English
- Weight
- 314 KB
- Volume
- 30
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal
Si 1รx Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 โข 10 15 cm ร2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha