✦ LIBER ✦

Photochemical growth of GaN and AlN on sapphire (0001) and GaAs(100)

✍ Scribed by P.C. John; J.J. Alwan; J.G. Eden

Book ID: 103425568
Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 568 KB
Volume: 218
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(92)90906-r

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-ray photoelectron spectroscopy analysi

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

✍ King, S. W.; Carlson, E. P.; Therrien, R. J.; Christman, J. A.; Nemanich, R. J.; 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 748 KB

Raman and reflection anisotropy spectros

Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)

✍ Paul R. Chalker; Tim B. Joyce; Trevor Farrell; Colin Johnston; Alison Crossley; 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 373 KB

Growth and characterization of GaAs on s

Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy

✍ Alain C. Diebold; S. W. Steinhauser; R. P. Mariella Jr.; Jordi Marti; F. Reiding 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 922 KB

## Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati

GaN/AlN super-lattice structures on vici

GaN/AlN super-lattice structures on vicinal sapphire (0001) substrates grown by rf-MBE

✍ X.Q. Shen; T. Yamamoto; S. Nakashima; H. Matsuhata; H. Okumura 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 257 KB

Optical reflectivity studies of GaN and

Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)

✍ Chalker, P.R; Joyce, T.B; Farrell, T 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 231 KB

High Quality Epitaxial Growth of Hexagon

High Quality Epitaxial Growth of Hexagonal GaN on Al2O3(0001) and Cubic GaN on GaAs(100) by Molecular Beam Epitaxy

✍ Kimura, R. ;Takahashi, K. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 99 KB 👁 1 views