Photobleaching of Ga2S3-GeS2 films prepared with pulsed laser deposition
β Scribed by A. Tverjanovich; A. Kotikova; E. N. Borisov
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 150 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1612-2011
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β¦ Synopsis
Influence of the illumination with energy above band gap on optical properties of the thin (x)(Ga~2~S~3~)(1-x)(GeS~2~) films prepared with Pulsed Laser Deposition was investigated. Observed photo-induced bleaching is due to photo-oxidation of Ge and possible Ga atoms. Increasing of Ga content in the film results in increasing of the bleaching effect. This process is limited by the rate of diffusion of oxygen.
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