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Photobleaching of Ga2S3-GeS2 films prepared with pulsed laser deposition

✍ Scribed by A. Tverjanovich; A. Kotikova; E. N. Borisov


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
150 KB
Volume
4
Category
Article
ISSN
1612-2011

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✦ Synopsis


Influence of the illumination with energy above band gap on optical properties of the thin (x)(Ga~2~S~3~)(1-x)(GeS~2~) films prepared with Pulsed Laser Deposition was investigated. Observed photo-induced bleaching is due to photo-oxidation of Ge and possible Ga atoms. Increasing of Ga content in the film results in increasing of the bleaching effect. This process is limited by the rate of diffusion of oxygen.


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