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Phosphorus site after CIRA implantation of type IIa diamond

✍ Scribed by Casanova, N; Gheeraert, E; Deneuville, A; Uzan-Saguy, C; Kalish, R

Book ID
122689256
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
127 KB
Volume
10
Category
Article
ISSN
0925-9635

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✍ Casanova, N. ;Gheeraert, E. ;Deneuville, A. ;Uzan-Saguy, C. ;Kalish, R. πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 84 KB πŸ‘ 1 views

Cold Implantation and Rapid Annealing (CIRA) at 1050 C of P in IIa diamond crystal, then further annealing at 1400 C were performed. EPR signals were obtained in particular (i) around g 2.003, from ``dangling bondΒΊ defects whose total concentration increases with the dose and decreases after anneali