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Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150cm2/Vs at 300K for ion-implanted diamond

✍ Scribed by Ratnikova, A.K.; Dukhnovsky, M.P.; Fedorov, Yu.Yu.; Zemlyakov, V.E.; Muchnikov, A.B.; Vikharev, A.L.; Gorbachev, A.M.; Radishev, D.B.; Altukhov, A.A.; Mitenkin, A.V.


Book ID
118025711
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
290 KB
Volume
20
Category
Article
ISSN
0925-9635

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