ESR Study of Phosphorus Implanted Type I
β
Casanova, N. ;Gheeraert, E. ;Deneuville, A. ;Uzan-Saguy, C. ;Kalish, R.
π
Article
π
2000
π
John Wiley and Sons
π
English
β 84 KB
π 1 views
Cold Implantation and Rapid Annealing (CIRA) at 1050 C of P in IIa diamond crystal, then further annealing at 1400 C were performed. EPR signals were obtained in particular (i) around g 2.003, from ``dangling bondΒΊ defects whose total concentration increases with the dose and decreases after anneali